DatasheetsPDF.com

MRF8HP21130HR3

Freescale Semiconductor
Part Number MRF8HP21130HR3
Manufacturer Freescale Semiconductor
Description RF Power Field Effect Transistors
Published Jul 7, 2011
Detailed Description Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors ...
Datasheet PDF File MRF8HP21130HR3 PDF File

MRF8HP21130HR3
MRF8HP21130HR3


Overview
Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev.
0, 4/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.
4 Vdc, Pout = 28 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 9.
9 dB @ 0.
01% Probability on CCDF.
Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 14.
2 14.
1 14.
0 ηD (%) 46.
4 45.
7 45.
1 Output PAR (dB) 7.
9 7.
7 7.
6 ACPR (dBc) --35.
4 --35.
3 --34.
8 MRF8HP21130HR3 MRF8HP21130HSR3 2110-2170 MHz, 28 W AVG.
, 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 157 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) www.
DataSheet4U.
net • Typical Pout @ 3 dB Compression Point ≃ 166 Watts CW (1) Features • Advanced High Performance In--Package Doherty • Production Tested in a Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • NI--780--4 in Tape and Reel.
R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p.
8.
• NI--780S--4 in Tape and Reel.
R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p.
8.
CASE 465M-01, STYLE 1 NI-780-4 MRF8HP21130HR3 CASE 465H-02, STYLE 1 NI-780S-4 MRF8HP21130HSR3 Peaking RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 Carrier (Top View) 2 RFoutB/VDSB Table 1.
Maximum Ratings Rating Drain--Source Voltage G...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)