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HFR1N60

SHANTOU HUASHAN ELECTRONIC
Part Number HFR1N60
Manufacturer SHANTOU HUASHAN ELECTRONIC
Description N-Channel MOSFET
Published Jul 11, 2011
Detailed Description Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFR1N60 ¨€ APPLICATIONSL TO-92 high-Speed Switching. www...
Datasheet PDF File HFR1N60 PDF File

HFR1N60
HFR1N60

Overview
Shantou Huashan Electronic Devices Co.
,Ltd.
N-Channel MOSFET HFR1N60 ¨€ APPLICATIONSL TO-92 high-Speed Switching.
www.
DataSheet4U.
net ¨€ ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£© T stg ¡ ª ¡ ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡- 55~150¡æ Tj PD ¡ª¡ªOperating ¡ª¡ª Junction Temperature ¡-¡-¡-¡-¡-¡¡-¡¡-¡150¡æ 1¨D G 2¨D D 3¨D S Allowable Power Dissipation£¨ T c=25¡æ £© ¡-¡¡-¡-¡-¡-¡1W Drain-Source Voltage ¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡600V Gate-Source Voltage ¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡± 30V VDSS VGSS ¡ª¡ª ¡ª¡ª ID ¡ª¡ª Drain Current £¨ T c=25¡æ £© ¡-¡-¡-¡-¡-¡-¡¡¡¡-¡¡-¡¡0.
4A IDM ¡ª¡ª Drain Current £¨ Pulsed£ © ¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡1.
6A ¨€ ELECTRICAL CHARACTERISTICS£¨ Ta=25¡æ£© Symbol Characteristics Min Typ Max Unit Test Conditions BVDSS IDSS IGSS VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Is VSD Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate – Source Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time Turn - Off Delay Time 600 50 2.
0 9.
3 0.
75 130 19 3.
5 7 21 13 27 4.
8 0.
7 2.
7 0.
3 1.
4 140 170 25 6 24 52 36 64 6.
2 ¡À 100 4.
0 11.
5 V ID=250¦Ì A ,VGS=0V ¦Ì A VDS =600V£¬ VGS=0 nA V ? S pF pF pF nS nS nS nS nC nC nC VGS=¡À 30V , VDS =0V VDS = VGS , ID =250¦Ì A VGS=10V, ID =0.
2A VDS = 40V , ID =0.
3A* VDS =25V, VGS=0,f=1MHz VDD =300V,ID =1.
1A RG= 25 ¦¸ * Fall Time Total Gate Charge Gate– Source Charge Gate– Drain Charge VDS =480V£¬ ID =1.
1A VGS =10V * Continuous Source Current A V ¡æ /W IS =0.
4A , VGS=0 Diode Forward Voltage Thermal Resistance£¬ Rth £¨ j-A£© Junction-to-Ambient *Pulse Test£º Pulse Width¡Ü 300¦Ì s£¬ Duty Cycle¡Ü 2% Shantou Huashan Electronic Devices Co.
,Ltd.
N-Channel MOSFET HFR1N60 Shantou Huashan Electronic Devices Co.
,Ltd.
N-Channel MOSFET HFR1N60 Shantou Huashan Electronic Devices Co.
,Ltd.
N-Channel MOSFET HFR1N60 Shantou Huashan Electronic Devic...


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