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PTFA142401EL

Infineon Technologies
Part Number PTFA142401EL
Manufacturer Infineon Technologies
Description Thermally-Enhanced High Power RF LDMOS FET
Published Jul 11, 2011
Detailed Description PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W,...
Datasheet PDF File PTFA142401EL PDF File

PTFA142401EL
PTFA142401EL


Overview
PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz www.
DataSheet4U.
net Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz frequency band.
Features include internal I/O matching and thermallyenhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA142401EL Package H-33288-2 PTFA142401FL Package H-34288-2 DVB-T Drive-up VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz, DVB-T signal, PAR = 9.
65 dB at 0.
01%, 8 MHz BW ACPR = 1475+/-4.
3 MHz delta marker, 30 kHz RBW Adjacent Channel Power Ratio (dB) -25 40 Features • • • Drain Efficiency (%) Pb-free, RoHS-compliant and thermally-enhanced packages with less than 0.
25 micron Au plating Broadband internal matching Typical DVB-T performance at 1475 MHz, 30 V - Average output power = 47.
0 dBm - Linear Gain = 16.
0 dB - Efficiency = 27.
5% - Adjacent channel power = –32 dBc Typical CW performance, 1475 MHz, 30 V - Output power at P–1dB = 240 W - Efficiency = 52% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 200 W (CW) output power Efficiency -30 30 -35 20 • -40 ACPR Hi ACPR Low 10 • • • -45 42 43 44 45 46 47 48 49 0 Average Output Power (dBm) RF Characteristics DVB-T Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) ƒ = 1475 MHz DVB-T, channel bandwidth = 8.
0 MHz , peak/average = 9.
65 dB @ 0.
01% CCDF VDD = 30 V, IDQ = 2.
0 A, POUT = 50 W average Characteristic Gain Drain Efficiency Adjacent Channel Power Ratio (±4.
3 MHz offset, 30 kHz RBW) Symbol Gps Min — — — Typ 16.
5 27.
5 –32 Max — — — Unit dB % dBc ηD ACPR All published data at TCASE = 25°C unless otherwise indicated *...



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