DatasheetsPDF.com

PTFA192001F

Infineon Technologies
Part Number PTFA192001F
Manufacturer Infineon Technologies
Description Thermally-Enhanced High Power RF LDMOS FET
Published Jul 11, 2011
Detailed Description PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, ...
Datasheet PDF File PTFA192001F PDF File

PTFA192001F
PTFA192001F

Overview
PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz www.
DataSheet4U.
net Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.
Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA192001E Package H-36260-2 PTFA192001F Package H-37260-2 2-Carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)