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BCP2098

SeCoS
Part Number BCP2098
Manufacturer SeCoS
Description Epitaxial Planar Transistor
Published Jul 14, 2011
Detailed Description BCP2098 Elektronische Bauelemente NPN Silicon Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” speci...
Datasheet PDF File BCP2098 PDF File

BCP2098
BCP2098

Overview
BCP2098 Elektronische Bauelemente NPN Silicon Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION www.
DataSheet4U.
net The BCP2098 SOT-89 is an epitaxial planar type NPN silicon transistor.
1 A E 4 FEATURES   2 3 C Excellent DC Current Gain Characteristics Low Saturation Voltage, Typically VCE(SAT)=0.
25V At IC / IB=4A / 0.
1A B F G H D CLASSIFICATION OF hFE (1) Product-Rank Range BCP2098-Q 120~270 BCP2098-R 180~390 REF.
A B C D E F K J L Millimeter Min.
Max.
0.
40 0.
58 1.
50 TYP 3.
00 TYP 0.
32 0.
52 0.
35 0.
44 PACKAGE INFORMATION Package SOT-89 MPQ 1K Leader Size 13’ inch Millimeter Min.
Max.
4.
40 4.
60 3.
94 4.
25 1.
40 1.
60 2.
30 2.
60 1.
50 1.
70 0.
89 1.
20 REF.
G H J K L ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current (Pulse) 1 Total Power Dissipation Junction & Storage temperature Symbol VCBO VCEO VEBO IC ICP PD TJ, TSTG Ratings 50 20 6 5 10 0.
5(2.
0) 2 Unit V V V A A W °C -55~150 Note: 1.
Single pulse, PW=10ms.
2.
When mounted on a 40*40*0.
7mm ceramic board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameters Collector-base breakdown voltage Collector-emitter breakdown Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage1 Transition frequency Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT COB Min.
50 20 6 120 - Typ.
0.
25 150 30 Max.
0.
5 0.
5 390 1 - Unit V V V μA μA V MHz pF Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=2V, IC=0.
5A IC=4A, IB=0.
1A VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0, f=1MHz Note: 1.
Measured under pulse condition.
Pulse width≦300s, Duty Cycle≦2%.
http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
19-May-2011 Rev.
...


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