DatasheetsPDF.com

APTGT400DA120D3G

Part Number	APTGT400DA120D3G
Manufacturer	Microsemi Corporation
Description	IGBT Power Module
Published	Jul 15, 2011
Detailed Description	APTGT400DA120D3G Boost chopper Trench + Field Stop IGBT Power Module www.DataSheet4U.net VCES = 1200V IC = 400A @ Tc = ...
Datasheet	APTGT400DA120D3G PDF File

Overview

APTGT400DA120D3G Boost chopper Trench + Field Stop IGBT Power Module www.
DataSheet4U.
net VCES = 1200V IC = 400A @ Tc = 80°C 3 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Q2 6 7 1 2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1200 580 400 800 ±20 2100 800A @ 1100V Unit V A V W September, 2008 1-5 APTGT400DA120D3G – Rev 0 These Devices are sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.
microsemi.
com www.
microsemi.
com APTGT400DA120D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 400A Tj = 125°C VGE = VCE , IC = 12mA VGE = 20V, VCE = 0V Min Typ 1.
7 2.
0 5.
8 Max 750 2.
1 6.
5 400 Unit µA V V nA 5.
0 Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Ti...

Similar Datasheet

APTGT400DA120D3G IGBT Power Module - Microsemi Corporation

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)