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PZT159

Weitron Technology
Part Number PZT159
Manufacturer Weitron Technology
Description PNP Silicon Planar High Current Transistor
Published Jul 16, 2011
Detailed Description PZT159 PNP Silicon Planar High Current Transistor P b Lead(Pb)-Free www.DataSheet4U.net COLLECTOR 2, 4 BASE 1 3 EM ITTE...
Datasheet PDF File PZT159 PDF File

PZT159
PZT159

Overview
PZT159 PNP Silicon Planar High Current Transistor P b Lead(Pb)-Free www.
DataSheet4U.
net COLLECTOR 2, 4 BASE 1 3 EM ITTER SOT-223 1.
BASE 2.
COLLECTOR 3.
EMITTER 4.
COLLECTOR 4 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Collector Current Total Device Disspation TA=25°C Junction Temperature Storage, Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) PD Tj Tstg Value -100 -60 -6 -5 -15 3 +150 -55 to +150 Unit V V V A A W ˚C ˚C *Device mounted in a typical manner on a P.
C.
B with copper 4 inches x 4 inches(min).
Device Marking PZT159 =159 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage(1) IC=-10mA, IB=0 Emitter-Base Breakdown Voltage IE=-100µA, IC=0 Collector Cut-O Current VCB=-80V, IE=0 Collector Cut-O Current VCES =-60V Emitter-Cut-O Current VEB=-6V, IC=0 Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO Min -...


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