DatasheetsPDF.com

NVTFS5116PL

ON Semiconductor
Part Number NVTFS5116PL
Manufacturer ON Semiconductor
Description P-Channel Power MOSFET
Published Jul 21, 2011
Detailed Description MOSFET – Power, Single P-Channel -60 V, -14 A, 52 mW NVTFS5116PL Features • Small Footprint (3.3 x 3.3 mm) for Compact...
Datasheet PDF File NVTFS5116PL PDF File

NVTFS5116PL
NVTFS5116PL

Overview
MOSFET – Power, Single P-Channel -60 V, -14 A, 52 mW NVTFS5116PL Features • Small Footprint (3.
3 x 3.
3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS5116PLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Cur- Tmb = 25°C ID rent RYJ−mb (Notes 1, 2, 3, 4) Steady Tmb = 100°C Power Dissipation State Tmb = 25°C PD RYJ−mb (Notes 1, 2, 3) Tmb = 100°C −14 A −10 21 W 10 Continuous Drain Cur- TA = 25°C ID rent RqJA (Notes 1 & 3, 4) Steady TA = 100°C Power Dissipation RqJA (Notes 1, 3) State TA = 25°C PD TA = 100°C −6 A −4 3.
2 W 1.
6 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM −126 A Operating Junction and Storage Temperature TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL(pk) = 30 A, L = 0.
1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS −17 A EAS 45 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Junction−to−Mounting Board (top) − Steady State (Note 2 and 3) Symbol RYJ−mb Value 7.
2 Unit °C/W Junction−to−Ambient − Steady State (Note 3) RqJA 47 1.
The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2.
Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface.
3.
Surface−mounted...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)