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NVTFS5811NL

ON Semiconductor
Part Number NVTFS5811NL
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jul 21, 2011
Detailed Description NVTFS5811NL MOSFET – Power, Single N-Channel 40 V, 6.7 mW, 40 A Features • Small Footprint (3.3 x 3.3 mm) for Compact D...
Datasheet PDF File NVTFS5811NL PDF File

NVTFS5811NL
NVTFS5811NL

Overview
NVTFS5811NL MOSFET – Power, Single N-Channel 40 V, 6.
7 mW, 40 A Features • Small Footprint (3.
3 x 3.
3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS5811NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Cur- Tmb = 25°C ID rent RYJ−mb (Notes 1, 2, 3, 4) Steady Tmb = 100°C Power Dissipation State Tmb = 25°C PD RYJ−mb (Notes 1, 2, 3) Tmb = 100°C 40 A 28 21 W 10 Continuous Drain Cur- TA = 25°C ID rent RqJA (Notes 1 & 3, 4) Steady TA = 100°C Power Dissipation RqJA (Notes 1, 3) State TA = 25°C PD TA = 100°C 16 A 11 3.
2 W 1.
6 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 354 A Operating Junction and Storage Temperature TJ, Tstg −55 to °C +175 S...


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