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SUM60N08-07C

Vishay Siliconix
Part Number SUM60N08-07C
Manufacturer Vishay Siliconix
Description N-Channel 75-V (D-S) MOSFET
Published Jul 22, 2011
Detailed Description SUM60N08-07C Vishay Siliconix N-Channel 75-V (D-S) MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS www.Dat...
Datasheet PDF File SUM60N08-07C PDF File

SUM60N08-07C
SUM60N08-07C

Overview
SUM60N08-07C Vishay Siliconix N-Channel 75-V (D-S) MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS www.
DataSheet4U.
net 75 (V) rDS(on) (W) 0.
007 @ VGS = 10 V ID (A) 60a D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package APPLICATIONS D Automotive D Industrial D2PAK-5 D (Tab, 3) (1) G 1 2 3 4 5 SENSE S (5) G KELVIN D S SENSE N-Channel MOSFET (4) (2) KELVIN ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d Pulsed Drain Current Continous Diode Current (Diode Avalanche Current Repetitive Avalanche Energyb L = 0.
1 mH TC = 25_C TA = 25_C Conduction)d TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS IAR EAR PD TJ, Tstg Limit 75 "20 60a 60a 240 60a 60a 180 300c 3.
75d - 55 to 175 Unit V A mJ W _C Maximum Power Dissipationa Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientd Junction-to-Case Notes a.
Package limited.
b.
Duty cycle v 1%.
c.
See SOA curve for voltage derating.
d.
When mounted on 1” square PCB (FR-4 material).
Document Number: 71834 S-03076—Rev.
C, 03-Feb-03 www.
vishay.
com PCB Mountd Symbol RthJA RthJC Limit 40 0.
5 Unit _C/W 1 SUM60N08-07C Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 25 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 25 A, TJ = 125_C VGS = 10 V, ID = 25 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 20 A 100 120 0.
0054 0.
007 0.
010 0.
013 S W 75 2 4 "100 1 50 500 A mA m V nA Symbol Test Condition Min Typ ...


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