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SUM60N02-3M9P

Vishay Siliconix
Part Number SUM60N02-3M9P
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Jul 26, 2011
Detailed Description SUM60N02-3m9P Vishay Siliconix N-Channel 20-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 20 rDS(on) (Ω) 0.0039 a...
Datasheet PDF File SUM60N02-3M9P PDF File

SUM60N02-3M9P
SUM60N02-3M9P

Overview
SUM60N02-3m9P Vishay Siliconix N-Channel 20-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 20 rDS(on) (Ω) 0.
0039 at VGS = 10 V 0.
0052 at VGS = 4.
5 V ID (A)a 60 60 FEATURES • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • OR-ing D TO-263 G DRAIN connected to TAB G D S S N-Channel MOSFET Top View Ordering Information: SUM60N02-3m9P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.
1 mH TC = 25 °C TA = 25 °Cd TC = 25 °C TC = 100 °C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 20 ± 20 60a 60a 120 50 125 120 c Unit V A mJ W °C 3.
75 - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) Junction-to-Case Notes: a.
Package limited.
b.
Duty cycle ≤ 1 %.
c.
See SOA curve for voltage derating.
d.
When mounted on 1" square PCB (FR-4 material).
d Symbol RthJA RthJC Limit 40 1.
25 Unit °C/W Document Number: 69820 www.
DataSheet4U.
net S-80183-Rev.
A, 04-Feb-08 www.
vishay.
com 1 SUM60N02-3m9P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VDS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 125 °C VDS = 20 V, VGS = 0 V, TJ = 175 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 20 A, TJ = 125 °C VGS = 10 V, ID = 20 A, TJ = 175 °C VGS = 4.
5 V, ID = 20 A Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charg...


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