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MB81EDS516445

Fujitsu
Part Number MB81EDS516445
Manufacturer Fujitsu
Description 512M Bit (4 bank x 2M word x 64 bit)
Published Jul 30, 2011
Detailed Description FUJITSU MICROELECTRONICS DATA SHEET DS05-11464-1E MEMORY Consumer FCRAMTM CMOS 512M Bit (4 bank x 2M word x 64 bit) C...
Datasheet PDF File MB81EDS516445 PDF File

MB81EDS516445
MB81EDS516445

Overview
FUJITSU MICROELECTRONICS DATA SHEET DS05-11464-1E MEMORY Consumer FCRAMTM CMOS 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP MB81EDS516445 ■ DESCRIPTION The Fujitsu MB81EDS516445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 536,870,912 storages accessible in a 64-bit format.
MB81EDS516445 is suited for consumer application requiring high data band width with low power consumption.
* : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan ■ FEATURES • 2 M word × 64 bit × 4 banks organization • DDR Burst Read/Write Access Capability -tCK = 4.
6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C) • Low Voltage Power Supply: VDD = VDDQ + 1.
7 V to + 1.
9 V • Junction Temperature: TJ = − 10 °C to + 125 °C • 1.
8 V-CMOS compatible inputs • Burst Length: 2, 4, 8, 16 • CAS latency: 2, 3, 4 • Clock Stop capability during idle periods • Auto Precharge option for each burst access • Configurable Driver Strength and Pre Driver Strength • Auto Refresh and Self Refresh Modes • Deep Power Down Mode • Low Power Consumption -IDD4R =300 mA Max @ 3.
46 GByte/s -IDD4W =380 mA Max @ 3.
46 GByte/s • 8 K refresh cycles / 4 ms (Tj ≤ +125 °C) Copyright©2010 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2010.
2 www.
DataSheet4U.
net MB81EDS516445 ■ PIN DESCRIPTIONS Symbol CK, CK CKE CS RAS CAS WE BA[1:0] A[12:0] AP(A10) DM[7:0] *1 DQ[63:0] *1, *2 DQS[7:0] * VDDQ, VDD VSSQ, VSS 2 Type Input Input Input Input Input Input Input Input Input Input I/O I/O Supply Supply Clock Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Bank Address Inputs Address Inputs Auto Precharge Enable Input Data Mask Enable Data Bus Input / Output Data Strobe Power Supply Ground Function Row Column A0 to A12 A0 to A7 *1 : DM0, DM1, DM2, DM3, DM4, DM5, DM6 and DM7 correspond to DQ[7:0], DQ[15:8], DQ[23:16], DQ[31:24], DQ[39:32], DQ[...


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