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IPA90R500C3

Infineon Technologies
Part Number IPA90R500C3
Manufacturer Infineon Technologies
Description CoolMOS Power Transistor
Published Aug 1, 2011
Detailed Description IPA90R500C3 CoolMOS™ Power Transistor Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak cur...
Datasheet PDF File IPA90R500C3 PDF File

IPA90R500C3
IPA90R500C3

Overview
IPA90R500C3 CoolMOS™ Power Transistor Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on),max @ T J= 25°C Q g,typ 900 0.
5 68 V Ω nC PG-TO220 FP CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologies • PC Silverbox and consumer applications • Industrial SMPS Type IPA90R500C3 Package PG-TO220 FP Marking 9R500C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous drain current 2) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t AR3),4) Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0.
.
.
400 V static AC (f>1 Hz) Power dissipation Operating and storage temperature Mounting torque www.
DataSheet4U.
net Value 11 6.
8 24 388 0.
74 2.
2 50 ±20 ±30 34 -55 .
.
.
150 Unit A T C=25 °C I D=2.
2 A, V DD=50 V I D=2.
2 A, V DD=50 V mJ A V/ns V P tot T J, T stg T C=25 °C W °C Ncm 2008-07-29 M2.
5 screws page 1 50 Rev.
1.
0 IPA90R500C3 Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous diode forward current 2) Diode pulse current 3) Reverse diode d v /dt 5) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 6.
6 23 4 V/ns Unit A Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.
6 mm (0.
063 in.
) from case for 10 s 3.
7 62 K/W T sold - - 260 °C Electrical characteristics, at T J=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 µA V GS(...


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