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IPB017N06N3G

Infineon Technologies
Part Number IPB017N06N3G
Manufacturer Infineon Technologies
Description Power Transistor
Published Aug 1, 2011
Detailed Description Type IPB017N06N3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized...
Datasheet PDF File IPB017N06N3G PDF File

IPB017N06N3G
IPB017N06N3G

Overview
Type IPB017N06N3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB017N06N3 G Product Summary V DS R DS(on),max ID 60 1.
7 180 V mΩ A Package Marking PG-TO263-7 017N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) 3) 4) Value 180 180 720 634 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=100 A, R GS=25 Ω mJ V W °C T C=25 °C 250 -55 .
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175 55/175/56 J...


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