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IPD640N06LG

Infineon Technologies
Part Number IPD640N06LG
Manufacturer Infineon Technologies
Description Power Transistor
Published Aug 1, 2011
Detailed Description IPD640N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enh...
Datasheet PDF File IPD640N06LG PDF File

IPD640N06LG
IPD640N06LG

Overview
IPD640N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync.
rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID 60 64 18 V mΩ A Type IPD640N06L G Type Package IPD640N06L G Marking PG-TO252-3 640N06L PG-TO252-3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 18 12 72 43 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C1) I D=18 A, R GS=25 Ω I D=18 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 47 -55 .
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.
175 55/175/56 See figure 3 www.
DataSheet4U.
net Rev.
1.
4 page 1 2008-09-01 IPD640N06L G Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=16 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=18 A V GS=4.
5 V, I D=12 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=18 A 60 1.
2 1.
6 0.
01 2 1 µA V 3.
2 75 50 K/W Values typ.
max.
Unit 9.
5 1 10 47 64 1.
2 19 100 100 64 85 Ω S nA mΩ 2 Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2) Rev.
1.
4 page 2 2008-09-01 IPD640N06L G Parameter S...


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