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IPP60R099CPA

Infineon Technologies
Part Number IPP60R099CPA
Manufacturer Infineon Technologies
Description Power Transistor
Published Aug 1, 2011
Detailed Description IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 0.105 60 V Ω nC Features • Worl...
Datasheet PDF File IPP60R099CPA PDF File

IPP60R099CPA
IPP60R099CPA

Overview
IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 0.
105 60 V Ω nC Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications PG-TO220-3-1 Type IPP60R099CPA Package PG-TO220-3-1 Marking 6R099A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1),2) MOSFET dv /dt ruggedness Gate source voltage Power dissipation Operating temperature Storage temperature Mounting torque www.
DataSheet4U.
net Value 31 19 93 800 1.
2 11 Unit A I D,pulse E AS E AR I AR dv /dt V GS P tot Tj T stg T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V mJ A V/ns V W °C V DS=0.
.
.
480 V static T C=25 °C 50 ±20 255 -40 .
.
.
150 -40 .
.
.
150 M3 and M3.
5 screws page 1 60 Ncm 2009-11-25 Rev.
2.
2 IPP60R099CPA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 1) Reverse diode d v /dt 3) Symbol Conditions IS T C=25 °C I S,pulse dv /dt 93 15 V/ns Value 18 Unit A Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA T sold leaded 1.
6 mm (0.
063 in.
) from case for 10 s 0.
5 62 K/W - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=V GS, I D=1.
2 mA V DS=600 V, V GS=0 V, T j=25 °C V GS=20 V, V DS=0 V V GS=10 V, I D=18 A, T j=25 °C V GS=10 V, I D=18 A, T...


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