DatasheetsPDF.com

IPP60R385CP

Infineon Technologies
Part Number IPP60R385CP
Manufacturer Infineon Technologies
Description Power Transistor
Published Aug 1, 2011
Detailed Description IPP60R385CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv...
Datasheet PDF File IPP60R385CP PDF File

IPP60R385CP
IPP60R385CP

Overview
IPP60R385CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.
385 Ω 17 nC PG-TO220 CoolMOS CP is specially designed for: • Hard switching SMPS topologies Type IPP60R385CP Package PG-TO220 Ordering Code SP000082281 Marking 6R385P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0.
.
.
480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque www.
DataSheet4U.
net Value 9.
0 5.
7 27 227 0.
3 3 50 ±20 ±30 83 -55 .
.
.
150 Unit A T C=25 °C I D=3.
4 A, V DD=50 V I D=3.
4 A, V DD=50 V mJ A V/ns V P tot T j, T stg T C=25 °C W °C Ncm 2007-08-28 M3 and M3.
5 screws page 1 60 Rev.
2.
2 IPP60R385CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Parameter Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.
6 mm (0.
063 in.
) from case for 10 s 1.
5 62 K/W T C=25 °C Value 5.
2 27 15 Values typ.
max.
V/ns Unit Unit A T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=V GS, I D=0.
34 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)