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UP2003

UTC
Part Number UP2003
Manufacturer UTC
Description P-Channel Power MOSFET
Published Aug 1, 2011
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UP2003 9A, 25V P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Power MOSF...
Datasheet PDF File UP2003 PDF File

UP2003
UP2003

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UP2003 9A, 25V P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Power MOSFET  DESCRIPTION The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
 FEATURES * RDS(ON)<35 mΩ @ VGS =-4.
5 V, ID =-7 A * RDS(ON)<20 mΩ @ VGS =-10 V, ID =-9 A  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP2003L-TN3-R UP2003G-TN3-R Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel  MARKING www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 5 QW-R502-202.
C UP2003 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain Source Voltage Gate Source voltage VDSS -25 V VGSS ±20 V Continuous Drain Current Pulsed Drain Current (Note 1) ID IDM -9 -36 A Power Dissipation PD 2.
5 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL θJA θJC MIN TYP  ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) MAX 50 25 UNIT °C/W °C/W PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain Source Leakage Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS =0V, ID=-250µA VDS =-25V, VGS =0V VDS =0V, VGS =±20V ON CHARACTERISTICS Gate-Threshold Voltage On-State Drain Current (Note 2) Drain-Source On-Resistance (Note 2) VGS(TH) ID(ON) RDS(ON) VDS =VGS, ID =-250µA VDS = -5V, VGS = -10V VGS =-4.
5V, ID =-7A VGS =-10V, ID =-9A DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAME...


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