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IPP60R520E6

Infineon Technologies
Part Number IPP60R520E6
Manufacturer Infineon Technologies
Description MOSFET
Published Aug 1, 2011
Detailed Description MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™E6600V 600VCoolMOS™E6PowerTransistor IPx60R520E6 ...
Datasheet PDF File IPP60R520E6 PDF File

IPP60R520E6
IPP60R520E6

Overview
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™E6600V 600VCoolMOS™E6PowerTransistor IPx60R520E6 DataSheet Rev.
2.
2 Final PowerManagement&Multimarket 600V CoolMOS" E6 Power Transistor IPP60R520E6, IPA60R520E6 1 Description CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
CoolMOS" E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation.
The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.
g.
PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
drain pin 2 gate pin 1 source pin 3 Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt 650 0.
52 23.
4 22 2.
1 500 V ! nC A µJ A/µs Type / Ordering Code IPA60R520E6 IPP60R520E6 Package PG-TO220 FullPAK PG-TO220 Marking 6R520E6 Related Links IFX CoolMOS Webpage IFX Design tools 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.
2.
02, 20104-0142-0190 600V CoolMOS" E6 Power Transistor IPx60R520E6 Table of Contents Table of Contents 1 Description .
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2 Table of Contents .
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