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CDBFN130-G

Comchip Technology
Part Number CDBFN130-G
Manufacturer Comchip Technology
Description (CDBFN120-G - CDBFN1100-G) SMD Schottky Barrier Rectifiers
Published Aug 8, 2011
Detailed Description SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBFN120-G Thru CDBFN1100-G Voltage: 20 to 100 Volts Current: 1.0...
Datasheet PDF File CDBFN130-G PDF File

CDBFN130-G
CDBFN130-G

Overview
SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBFN120-G Thru CDBFN1100-G Voltage: 20 to 100 Volts Current: 1.
0 Amp RoHS Device Features - Batch process design, excellent powe dissipation offers better reverse leakage current .
-Low profile surface mounted application in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage dorp.
-High surge capability.
-Guardring for overvoltage protection.
-Very iny plastic SMD package.
-Ultra high-speed switching.
-Silicon epitaxial planarchip, metal silicon junction.
-Lead-free parts meet environmental standards of MIL-STD-19500 /228 SOD-323 0.
106 (2.
70) 0.
091 (2.
3) 0.
012(0.
3) Typ.
0.
057 (1.
45) 0.
041 (1.
05) 0.
047 (1.
2) 0.
031 (0.
8) Mechanical data -Case: JEDEC SOD-323, Molded plastic -Terminals: Solde plated, solderable per MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any -Weight:0.
008 gram(approx.
).
Maximum Ratings(at TA=25 OC Parameter Repetitive peak reverse voltage Maximum RMS voltage Continuous reverse voltage Maximum forward voltage @IF=1.
0A Forward rectified current Forward surge current, 8.
3ms half sine wave superimposed on rated load (JEDEC method) Reverse current on VR=VRRM @TA=25 C @TA=125 C Typ.
thermal resistance, junction to ambient air Typ.
diode junction capacitance (Note 1) Operating junction temperature Storage temperature Note 1: f=1MHz and applied 4V DC reverse voltage.
O O 0.
016(0.
4) Typ.
0.
016(0.
4) Typ.
Dimensions in inches and (millimeter) unless otherwise noted) 120-G 20 14 20 130-G 30 21 30 0.
55 Symbol CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN Unit 140-G 40 28 40 150-G 50 35 50 0.
70 160-G 60 42 60 180-G 80 56 80 1100-G 100 70 100 VRRM VRMS VR VF IO IFSM V V V V A A 0.
85 1.
0 30 0.
5 10 90 120 -55 to +125 -65 to +150 -55 to +150 O IR RθJA CJ TJ TSTG mA C/W pF O C C O REV:D www.
DataSheet4U.
net QW-BB022 Page 1 Comchip Technology CO.
, LTD.
SMD Schottky Barrier Rectifiers SMD Diodes...


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