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HP142T

SHANTOU HUASHAN ELECTRONIC DEVICES
Part Number HP142T
Manufacturer SHANTOU HUASHAN ELECTRONIC DEVICES
Description NPN SILICON TRANSISTOR
Published Aug 27, 2011
Detailed Description www.DataSheet4U.net Shantou Huashan Electronic Devices Co.,Ltd. NPN DARLINGTON TRANSISTOR HP142T █ APPLICATIONS High...
Datasheet PDF File HP142T PDF File

HP142T
HP142T

Overview
www.
DataSheet4U.
net Shantou Huashan Electronic Devices Co.
,Ltd.
NPN DARLINGTON TRANSISTOR HP142T █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 80W VCBO——Collector-Base Voltage…………………………… 100V VCEO——Collector-Emitter Voltage………………………… 100V VEBO —— Emitter-Base Voltage ……………………………… 5V IC——Collector Current（DC）……………………………… 10A IB——Base Current……………………………………………0.
5A TO-220 1―Base，B 2―Collector，C 3―Emitter, E █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter-Base Cutoff Current Min Typ Max Unit Test Conditions BVCEO(SUS) ICEO ICBO IEBO HFE（1） HFE（2） VCE(sat1) VCE(sat2) VBE(sat) VBE(on) tD tR tS tF 100 2 1 2 1000 500 2 3 3.
5 3 0.
15 0.
55 2.
5 2.
5 V mA mA mA IC=30mA, IB=0 VCE=50V, IB=0 VCB=100V, IE=0 VEB=5V, IC=0 VCE=4V, IC=5A VCE=4V, IC=10A DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Base- Emitter On Voltage Deiay time Rise Time Storage Time Fall Time V V V V uS uS uS uS IC=5A, IB=10mA IC=10A, IB=40mA IC=10A, IB=40mA VCE=4V,IC=10A, Vcc=30V,Ic=5A IB1=20mA IB2=-20mA www.
DataSheet4U.
net Shantou Huashan Electronic Devices Co.
,Ltd.
NPN DARLINGTON TRANSISTOR HP142T ...


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