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SSM4507M

Silicon Standard
Part Number SSM4507M
Manufacturer Silicon Standard
Description COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Aug 28, 2011
Detailed Description www.DataSheet4U.net SSM4507M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Low...
Datasheet PDF File SSM4507M PDF File

SSM4507M
SSM4507M

Overview
www.
DataSheet4U.
net SSM4507M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching performance D2 D1 D2 D1 D1 D1 D2 D2 N-Ch BV DSS 30V 36mΩ 6.
0A -30V 72mΩ -4.
2A R DS(ON) G2 G2 S2 G1 S2 S1 G1 S1 P-Ch SO-8 Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
The SO-8 package is widely preferred for commercial and industrial surface mount applications and is well suited for low-voltage applications such as DC/DC converters.
G1 ID BV DSS R DS(ON) ID D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25°C ID@TA=70°C IDM PD@TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 6 4.
8 20 2.
0 0.
016 -55 to 150 -55 to 150 P-channel -30 ±20 -4.
2 -3.
4 -20 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
62.
5 Unit °C/W Rev.
1.
01 4/06/2004 www.
SiliconStandard.
com 1 of 7 www.
DataSheet4U.
net SSM4507M N-channel Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
30 1 Typ.
0.
02 Max.
Units 36 60 3 1 25 ±100 10 690 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance 2 VGS=10V, ID=6A VGS=4.
5V, ID=4A VDS=VGS, ID=250uA VDS=10V, ID=6A 8 6 2 3 7 6 15 4 430 100 70 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage ...


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