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SSM4565GM

Silicon Standard
Part Number SSM4565GM
Manufacturer Silicon Standard
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Aug 28, 2011
Detailed Description www.DataSheet4U.net SSM4565M/GM COMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement...
Datasheet PDF File SSM4565GM PDF File

SSM4565GM
SSM4565GM

Overview
www.
DataSheet4U.
net SSM4565M/GM COMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristic D2 D1 D2 D1 D1 D1 D2 N-CH BV DSS R DS(ON) ID G2 G2 S2 G1 S2 S1 G1 S1 40V 25mΩ 7.
6A -40V 33mΩ -6.
5A D1 D2 P-CH BVDSS RDS(ON) ID SO-8 Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SSM4565M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters.
G1 G2 S1 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM4565GM.
Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 40 ±20 7.
6 6 30 2.
0 0.
016 -55 to 150 -55 to 150 P-channel -40 ±20 -6.
5 -5.
2 -30 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
62.
5 Unit °C/W 12/10/2004 Rev.
2.
01 www.
SiliconStandard.
com 1 of 5 www.
DataSheet4U.
net SSM4565M/GM N-channel Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.
40 1 - Typ.
Max.
Units 0.
03 12 17 4 10 11 8 30 11 250 170 25 32 3 1 25 ±100 27 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=7A VGS=4.
5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Thresh...


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