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IPU050N03L

Infineon Technologies
Part Number IPU050N03L
Manufacturer Infineon Technologies
Description Fast switching MOSFET
Published Aug 30, 2011
Detailed Description www.DataSheet4U.net Type IPD050N03L G IPS050N03L G IPF050N03L G IPU050N03L G OptiMOS®3 Power-Transistor Features • F...
Datasheet PDF File IPU050N03L PDF File

IPU050N03L
IPU050N03L

Overview
www.
DataSheet4U.
net Type IPD050N03L G IPS050N03L G IPF050N03L G IPU050N03L G OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant Type IPD050N03L G IPF050N03L G 1) Product Summary V DS R DS(on),max ID 30 5 50 V mΩ A IPS050N03L G IPU050N03L G Package Marking PG-TO252-3-11 050N03L PG-TO252-3-23 050N03L PG-TO251-3-11 050N03L PG-TO251-3-21 050N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.
5 V, T C=25 °C V GS=4.
5 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage 1) Value 50 50 50 50 350 50 60 6 ±20 Unit A I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=35 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V J-STD20 and JESD22 Rev.
1.
02 page 1 2008-04-15 www.
DataSheet4U.
net IPD050N03L G IPS050N03L G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 °C Value 68 IPF050N03L G IPU050N03L G Unit W °C -55 .
.
.
175 55/175/56 Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm² cooling area 4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 µA V DS=30 V, V GS=0 V, T j=25 °C V...


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