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IPD05N03LBG

Infineon Technologies
Part Number IPD05N03LBG
Manufacturer Infineon Technologies
Description OptiMOS2 Power-Transistor
Published Aug 30, 2011
Detailed Description www.DataSheet4U.net IPD05N03LB G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qua...
Datasheet PDF File IPD05N03LBG PDF File

IPD05N03LBG
IPD05N03LBG

Overview
www.
DataSheet4U.
net IPD05N03LB G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant 1) Product Summary V DS R DS(on),max ID 30 4.
8 90 V mΩ A PG-TO252-3-11 Type IPD05N03LB G Package PG-TO252-3-11 Ordering Code Q67042-S4262 Marking 05N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=90 A, R GS=25 Ω I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 90 74 420 120 6 ±20 94 -55 .
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