DatasheetsPDF.com

HMP525R7FFP4C-E3

Hynix Semiconductor
Part Number HMP525R7FFP4C-E3
Manufacturer Hynix Semiconductor
Description 240pin Registered DDR2 SDRAM DIMMs
Published Sep 5, 2011
Detailed Description www.DataSheet4U.net 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb F ver. This Hynix registered Dual In-Line Memory...
Datasheet PDF File HMP525R7FFP4C-E3 PDF File

HMP525R7FFP4C-E3
HMP525R7FFP4C-E3


Overview
www.
DataSheet4U.
net 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb F ver.
This Hynix registered Dual In-Line Memory Module (DIMM) series consists of 512Mb F ver.
DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate.
This Hynix 512Mb F ver.
based Registered DDR2 DIMM series provide a high performance 8 byte interface in 133.
35mm width form factor of industry standard.
It is suitable for easy interchange and addition.
ORDERING INFORMATION Part Name HMP564P7FFP8C-Y5 HMP512R7FFP4C-E3 HMP512P7FFP4C-Y5 HMP525R7FFP4C-E3 HMP525P7FFP4C-Y5 Density 512MB 1GB 1GB 2GB 2GB Org.
64Mx72 128Mx72 128Mx72 256Mx72 256Mx72 Component Configuration 64Mx8(H5PS5182FFP)*9 128Mx4(H5PS5142FFP)*18 128Mx4(H5PS5142FFP)*18 128Mx4(H5PS5142FFP)*36 128Mx4(H5PS5142FFP)*36 Ranks 1 1 1 2 2 Parity Support O X O X O Note: 1.
“P” of part number[7th digit] stands for Parity Registered DIMM.
2.
“P” of part number[11th digit] stands for Lead free products.
SPEED GRADE & KEY PARAMETERS E3 (DDR2-400) Speed@CL3 Speed@CL4 Speed@CL5 Speed@CL6 CL-tRCD-tRP 400 400 3-3-3 C4 (DDR2-533) Y5 (DDR2-667) 400 533 4-4-4 400 533 667 5-5-5 S6 (DDR2-800) 400 533 800 6-6-6 S5 (DDR2-800) 400 533 800 5-5-5 This document is a general product description and is subject to change without notice.
Hynix Semiconductor does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev.
0.
1 / May.
2008 1 www.
DataSheet4U.
net 1240pin Registered DDR2 SDRAM DIMMs FEATURES • • • • • • • • • • • • • • • • • • JEDEC standard 1.
8V +/- 0.
1V Power Supply VDDQ : 1.
8V +/- 0.
1V All inputs and outputs are compatible with SSTL_1.
8 interface 4 Bank architecture Posted CAS Programmable CAS Latency 3 , 4 , 5 OCD (Off-Chip Driver Impedance Adjustment) ODT (On-Die Termination) Fully differential clock operations (CK & CK) Programmable Burst Length 4 / 8 with both sequential and interleave mode Average Auto Refresh Period 7.
8us under TCASE 85℃, 3.
9us at 85℃ < TCASE ≤ 95 ℃ High Tempe...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)