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2SB1389

Part Number	2SB1389
Manufacturer	Hitachi Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	2SB1389 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collec...
Datasheet	2SB1389 PDF File

Overview

2SB1389 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1.
Base 2.
Collector 3.
Emitter ID 4.
5 kΩ (Typ) 500 Ω (Typ) 3 12 3 2SB1389 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature C to E diode forward current Note: 1.
Value at TC = 25°C.
Tj Tstg ID* 1 1 Ratings –60 –60 –7 –4 –8 2 25 150 –55 to +150 4 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO ...

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