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MI3407

Part Number	MI3407
Manufacturer	MegaPower Semiconductor
Description	P-Channel 30V MOSFET
Published	Sep 27, 2011
Detailed Description	www.DataSheet.co.kr MI3407 P-Channel 30V (D-S ) MOSFET General Description This miniature surface monut MOSFET uses adv...
Datasheet	MI3407 PDF File

Overview

www.
DataSheet.
co.
kr MI3407 P-Channel 30V (D-S ) MOSFET General Description This miniature surface monut MOSFET uses advanced t rench process , low R DS ( on ) assures minimal power loss and energy conversion , which makes this device ideal for use in power managementcircuit.
Features V DS (V) = -30V I D (A) = -4A (V GS = -10V) R DS(on) = 0.
060 ohm @ V GS = -10V R DS(on) = 0.
090 ohm@ V GS = -4.
5V Low gate charge Fast switching speed Applications Load switch DC - DC converters Power management D S G SOT-23 G D S Absolute Maximum Ratings (T A = 25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b a Symbol V DS V GS T A =25℃ T A =70℃ ID I DM IS T A =25℃ T A =70℃ PD T J ,T stg Maximum Units V - 30 ±20 -4 -3.
2 A - 20 -2.
2 1.
4 1.
0 -55 to 150 W ℃ A Continuous Source Current (Diode Conduction) Power Dissipation a Operating Junction and Storage Temperature Range Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient a t<= 5 sec Steady-State Symbol R θ JA 130 Maximum 90 Units ℃/ W Megapower Semiconductor Mar,2009 1 MI3407 Rev.
2.
1 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr MI3407 Package Outlines and Ordering Information Device Marking MPTS Device MI3407 Reel Size 7’’ Tape Width 8mm Quantity 3000 units Specifications (T A = 25℃ Unless Otherwise Noted) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current c Drain - Source On - Resistance c Forward Tranconductance c Diode Forward Voltage Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time t d ( on ) tr t d ( off ) tf VDS=-15V, ID=-4.
0A, RG=3 ohm,VGEN=-10V 9 15 75 48 18 30 150 80 ns C iss C oss C rss Qg Q gs Q gd V DS = - 15V,V GS = -10 V ID =-4.
0 A V DS =15V,V GS =0V f=...

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MI3407 P-Channel 30V MOSFET - MegaPower Semiconductor

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