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2N4003K

Weitron Technology
Part Number 2N4003K
Manufacturer Weitron Technology
Description N-Channel Enhancement Mode Power MOSFET
Published Sep 28, 2011
Detailed Description www.DataSheet.co.kr 2N4003K N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN * * Low Gate Vol...
Datasheet PDF File 2N4003K PDF File

2N4003K
2N4003K

Overview
www.
DataSheet.
co.
kr 2N4003K N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN * * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design.
* Low Gate Charge for Fast Switching.
* ESD Protected Gate.
* Minimum Breakdown Voltage Rating of 30V.
Features: * Gate Pretection Diode SOURCE 2 DRAIN CURRENT 0.
5 AMPERES DRAIN SOUCE VOLTAGE 30 VOLTAGE 3 1 2 Application: * Level Shifters * Level Switches * Low Side Load Switches * Portable Applications SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 ,Steady State Unless Otherwise Specified) Symbol V DS VG S Value 30 ±20 0.
5 0.
37 0.
69 0.
56 0.
40 0.
83 1.
7 180 150 300 +150 -55~+150 1.
0 260 Unit V (TA=25°C) (TA=85°C) ID PD A W A W A °C /W °C °C A °C Power Dissipation1 ,Steady State (TA=25°C) (TA=85°C) Continuous Drain Current 1 ,t<10s ID PD IDM Power Dissipation1 Pulsed Drain Current ,t<5s Maximum Junction-ambient ,Steady State1 ,t<10s1 ,Steady State2 R θJA TJ Tstg IS TL Operating Junction Temperature Range Storage Temperature Range Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case 10s) Note: 1.
Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.
127 in sq [1 oz] including traces).
2.
Surface−mounted on FR4 board using the minimum recommended pad size.
Device Marking 2N4003K = TR8 WEITRON http://www.
weitron.
com.
tw 1/6 08-Sep-09 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr 2N4003K Electrical Characteristics (TA =25°C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V G S =0, ID =100 A Gate-Source Threshold Voltage3 V DS =V GS , ID =250 A Gate-Source Leakage Current V G S = ± 10V Zero Gate Voltage Drain Current (TJ =25˚C) V DS =30V,VG S =0 Drain-Source On-Resistance3 V G S =2.
5V,I D = 10mA V G S =4.
0V,I D =10mA Forward Transconductance3 V DS =3.
0V, ID =10mA V (BR)DSS V G S(Th) IGSS IDSS 30 0.
8 ...


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