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2SB1435

Panasonic Semiconductor
Part Number 2SB1435
Manufacturer Panasonic Semiconductor
Description Silicon PNP epitaxial planar type Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification 7.5±0.2 3.8±0.2 Uni...
Datasheet PDF File 2SB1435 PDF File

2SB1435
2SB1435

Overview
Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification 7.
5±0.
2 3.
8±0.
2 Unit: mm 4.
5±0.
2 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC • Allowing automatic insertion with radial taping 10.
8±0.
2 0.
65±0.
1 2.
5±0.
1 0.
85±0.
1 1.
0±0.
1 0.
8 C 90˚ 0.
8 C 16.
0±1.
0 0.
7±0.
1 0.
7±0.
1 1.
15±0.
2 1.
15±0.
2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −50 −5 −2 −3 1.
5 150 −55 to +150 Unit V V V A A W °C °C 0.
5±0.
1 0.
8 C 1 2 3 2.
05±0.
2 0.
4±0.
1 2.
5±0.
2 2.
5±0.
2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emiter open) Collector-emitter voltage (Base open) Emiter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob Conditions IC = −10 µA, IE = 0 IC = −1 mA, IB = 0 IE = −10 µA, IC = 0 VCB = −20 V, IE = 0 VCE = −2 V, IC = −200 mA VCE = −2 V, IC = −1 A IC = −1 A, IB = −50 mA IC = −1 A, IB = −50 mA VCB = −10 V, IE = 50 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz 120 60 − 0.
2 − 0.
85 80 45 60 − 0.
3 −1.
20 V V MHz pF Min −50 −50 −5 − 0.
1 340 Typ Max Unit V V V µA  Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank hFE1 R 120 to 240 S 170 to 340 Publication date: March 2003 SJD00074BED 1 2SB1435 PC  Ta 2.
0 Without heat sink 1.
8 Ta=25˚C 1.
5 IB=–8mA –7mA IC  VCE Collector-emi...


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