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9916H

Advanced Power Electronics
Part Number 9916H
Manufacturer Advanced Power Electronics
Description AP9916H
Published Oct 19, 2011
Detailed Description www.DataSheet.co.kr AP9916H/J Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low ...
Datasheet PDF File 9916H PDF File

9916H
9916H

Overview
www.
DataSheet.
co.
kr AP9916H/J Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.
5V gate drive ▼ Low drive current ▼ Single Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 18V 25mΩ 35A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current 1 Rating 18 ± 12 35 16 90 50 0.
4 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-am...


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