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2SB1490

Panasonic Semiconductor
Part Number 2SB1490
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SB1490 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2250...
Datasheet PDF File 2SB1490 PDF File

2SB1490
2SB1490

Overview
Power Transistors 2SB1490 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2250 6.
0 20.
0±0.
5 φ 3.
3±0.
2 5.
0±0.
3 3.
0 Unit: mm 26.
0±0.
5 10.
0 s Features q q q Optimum for 80W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): < –2.
5V 1.
5 2.
0 4.
0 1.
5 Solder Dip s 20.
0±0.
5 2.
5 2.
0±0.
3 3.
0±0.
3 1.
0±0.
2 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –160 –140 –5 –12 –7 90 3.
5 150 –55 to +150 Unit V V V A 2.
7±0.
3 0.
6±0.
2 5.
45±0.
3 10.
9±0.
5 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature 1 2 3 A W ˚C ˚C B 1:Base 2:Collector 3:Emitter TOP–3L Package Internal Connection C s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h E (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –160V, IE = 0 VCE = –140V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –5V, IC = –1A VCE = –5V, IC = –6A IC = –6A, IB = –6mA IC = –6A, IB = –6mA VCE = –10V, IC = – 0.
5A, f = 1MHz IC = –6A, IB1 = –6mA, IB2 = 6mA, VCC = –50V 20 1.
0 1.
5 1.
2 140 2000 5000 30000 –2.
5 –3.
0 MHz µs µs µs V min typ max –100 –100 –100 Unit µA µA µA V FE2 Rank classification Q P 5000 to 15000 8000 to 30000 Rank hFE2 2.
0 1.
5 3.
0 1 Power Transistors PC — Ta 200 –12 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.
5W) IB=–5mA 2SB1490 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –100 VCE(sat) — IC IC/IB=1000 Collector power dissipation PC (W) –10 –30 150 Collector current IC (A)...


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