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2SB1492

Panasonic Semiconductor
Part Number 2SB1492
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SB1492 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2254...
Datasheet PDF File 2SB1492 PDF File

2SB1492
2SB1492

Overview
Power Transistors 2SB1492 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2254 6.
0 20.
0±0.
5 φ 3.
3±0.
2 5.
0±0.
3 3.
0 Unit: mm 26.
0±0.
5 10.
0 s Features q q q Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.
5V 1.
5 2.
0 4.
0 1.
5 Solder Dip s 20.
0±0.
5 2.
5 2.
0±0.
3 3.
0±0.
3 1.
0±0.
2 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –130 –110 –5 –10 –6 70 3.
5 150 –55 to +150 Unit V V V A 2.
7±0.
3 0.
6±0.
2 5.
45±0.
3 10.
9±0.
5 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature 1 2 3 A W ˚C ˚C B 1:Base 2:Collector 3:Emitter TOP–3L Package Internal Connection C s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h E (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –130V, IE = 0 VCE = –110V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –5V, IC = –1A VCE = –5V, IC = –5A IC = –5A, IB = –5mA IC = –5A, IB = –5mA VCE = –10V, IC = – 0.
5A, f = 1MHz IC = –5A, IB1 = –5mA, IB2 = 5mA, VCC = –50V 20 0.
9 2.
5 1.
7 –110 2000 5000 30000 –2.
5 –3.
0 MHz µs µs µs V min typ max –100 –100 –100 Unit µA µA µA V FE2 Rank classification Q P 5000 to 15000 8000 to 30000 Rank hFE2 2.
0 1.
5 3.
0 1 Power Transistors PC — Ta 80 2SB1492 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –12 TC=25˚C –10 IB=–5mA –100 VCE(sat) — IC IC/IB=1000 Collector power dissipation PC (W) 70 60 50 40 30 20 (2) 10 (3) 0 0 20 40 Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm...


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