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2SB1494

Hitachi Semiconductor
Part Number 2SB1494
Manufacturer Hitachi Semiconductor
Description Silicon PNP Triple Diffused Type Transistor
Published Mar 22, 2005
Detailed Description 2SB1494 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary Pair with 2SD2256 Outline ...
Datasheet PDF File 2SB1494 PDF File

2SB1494
2SB1494

Overview
2SB1494 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 2 1 1.
Base 2.
Collector (Flange) 3.
Emitter ID 1 2 3 3 2SB1494 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Ratings –120 –120 –7 –25 –35 120 150 –55 to +150 25 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –120 –120 –120 –7 — — 2000 500 — — — — Typ — — — — — — — — — — — — Max — — — — –10 –10 20000 — –2.
0 –3.
5 –3.
0 –4.
5 V V Unit V V V V µA Test conditions I C = –0.
1 mA, IE = 0 I C = –25 mA, RBE = ∞ I C = –200 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –100 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –4 V, IC = –12 A*1 VCE = –4 V, IC = –25 A*1 I C = –12 A, IB = –24 mA*1 I C = –25 A, IB = –250 mA*1 I C = –12 A, IB = –24 mA I C = –25 A, IB = –250 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO DC current transfer ratio hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1.
Pulse test.
VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 2 2SB1494 Maximum Collector Dissipation Curve 120 Collector power dissipation PC (W) –100 iC(peak) Collector current IC (A) –30 –10 –3 –1.
0 –0.
3 –0.
1 –3 Ta = 25°C 1 Shot Pulse IC(max) PW =1 Area of Safe Operation 80 1m s s 0m DC ti era Op 40 0 50 100 Case temperature TC (°C) 150 –10 –30 –100 –300 Collector to emitter voltage VCE (V) Typical Output Characteristics –20 –16 TC = 25°C –5 .
0 DC Current Transfer Ratio vs.
Collector Current 100000 DC current transfer ratio hFE 3...


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