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IPB45N04S4L-08

Infineon Technologies
Part Number IPB45N04S4L-08
Manufacturer Infineon Technologies
Description OptiMOS-T2 Power-Transistor
Published Oct 20, 2011
Detailed Description www.DataSheet.co.kr IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V DS R...
Datasheet PDF File IPB45N04S4L-08 PDF File

IPB45N04S4L-08
IPB45N04S4L-08

Overview
www.
DataSheet.
co.
kr IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 40 7.
6 45 PG-TO262-3-1 V mΩ A Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TO263-3-2 PG-TO220-3-1 Type IPB45N04S4L-08 IPI45N04S4L-08 IPP45N04S4L-08 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N04L08 4N04L08 4N04L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=22A T C=25°C Value 45 42 180 55 45 +20/-16 45 -55 .
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+175 55/175/56 mJ A V W...


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