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IPB45N06S3-16

Part Number	IPB45N06S3-16
Manufacturer	Infineon Technologies
Description	OptiMOS-T Power-Transistor
Published	Oct 20, 2011
Detailed Description	www.DataSheet.co.kr IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS®-T Power-Transistor Features • N-channel - Enha...
Datasheet	IPB45N06S3-16 PDF File

Overview

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DataSheet.
co.
kr IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 55 15.
4 45 V mΩ A PG-TO262-3-1 PG-TO220-3-1 Type IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Ordering Code SP0001-02224 SP0001-02217 SP0001-02218 Marking 3N0616 3N0616 3N0616 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions ID T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V DG V GS P tot T j, T stg T C=25 °C T C=25 °C I D= 27.
5 A Value 45 33 180 95 55 ±20 65 -55 .
.
.
+175 55/175/56 V W °C mJ Unit A Rev.
1.
0 page 1 2005-11-25 Datasheet pdf - http://www.
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net/ www.
DataSheet.
co.
kr IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 Parameter Symbol Conditions min.
Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=V GS, I D=30 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C1) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=23 A V GS=10 V, I D=23 A, SMD version 55 2.
1 3 0.
1 4 1 µA V 2.
3 62 62 40 K/W Values typ.
max.
Unit - 1 1 13.
5 13.
2 100 100 15.
7 15.
4 n...

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IPB45N06S3-16 OptiMOS-T Power-Transistor - Infineon Technologies

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