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P1403EVG

NIKO-SEM
Part Number P1403EVG
Manufacturer NIKO-SEM
Description P-Channel FET
Published Oct 26, 2011
Detailed Description www.DataSheet.co.kr NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EVG SOP-8 Field Effect Transistor D PRODUCT SU...
Datasheet PDF File P1403EVG PDF File

P1403EVG
P1403EVG


Overview
www.
DataSheet.
co.
kr NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EVG SOP-8 Field Effect Transistor D PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 14mΩ ID -11 Halogen-Free & Lead-Free G S 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless O PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation L = 0.
1mH TA = 25 °C TA = 70 °C 1 therwise Noted) SYMBOL VDS VGS 100% UIS tested LIMITS -30 ±25 -11 -9 -50 -43 90 2.
5 1.
6 -55 to 150 mJ W A UNITS V V TA = 25 °C TA = 70 °C ID IDM IAS EAS PD Tj, Tstg Operating Junction & Storage Temperature Range °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 SYMBOL RθJc RθJA TYPICAL MAXIMUM 25 50 UNITS °C / W °C / W Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±25V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 125 °C -30 -1 -1.
7 -3 ±100 -1 -10 µA nA V LIMITS UNIT MIN TYP MAX REV 1.
3 1 Jun-22-2010 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EVG SOP-8 Field Effect Transistor Halogen-Free & Lead-Free 14 9 28 22 14 VGS = -4.
5V, ID = -9A VGS = -10V, ID = -12A VDS = -10V, ID = -12A DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge 2 Drain-Source On-State 1 Resistance Forward Transconductance 1 RDS(ON) gfs mΩ S Ciss Coss Crss Rg Qg(VGS=10V) Qg(VGS=4.
5V) VDS = 0.
5V(BR)DSS, VGS = -10V, ID = -12A 2 2510 VGS = 0V, VDS = -15V, f = 1MHz 449 349 VGS = 0V, VDS = 0V, f = 1MHz 7.
3 48 26 7 9 12 VDS = -15V, ID ≅ -1A, VGS = -10V...


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