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2SB1571

Part Number	2SB1571
Manufacturer	NEC
Description	PNP SILICON EPITAXIAL TRANSISTOR
Published	Mar 22, 2005
Detailed Description	DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1571 PNP SILICON EPITAXIAL TRANSISTOR FEATURES • Low VCE(sat): VCE(sat...
Datasheet	2SB1571 PDF File

Overview

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1571 PNP SILICON EPITAXIAL TRANSISTOR FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.
35 V • Complementary to 2SD2402 PACKAGE DRAWING (Unit: mm) 4.
5±0.
1 1.
6±0.
2 1.
5±0.
1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −50 Collector to Emitter Voltage VCEO −30 Emitter to Base Voltage VEBO −6.
0 Collector Current (DC) IC(DC) −5.
0 Note1 Collector Current (pulse) IC(pulse) −8.
0 Base Current (DC) IB(DC) −0.
2 Note1 Base Current (pulse) IB(pulse) −0.
4 Note2 Total Power Dissipation PT 2.
0 Junction Temperature Tj 150 Storage Temperature Range Tstg –55 to + 150 Notes 1.
PW ≤ 10 ms, Duty Cycle ≤ 50% 2 2.
When mounted on ceramic substrate of ...

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