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ME4435

Matsuki
Part Number ME4435
Manufacturer Matsuki
Description P-Channel 30-V (D-S) MOSFET
Published Oct 31, 2011
Detailed Description www.DataSheet.co.kr ME4435 P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4435 is the P-Channel logic enhancemen...
Datasheet PDF File ME4435 PDF File

ME4435
ME4435

Overview
www.
DataSheet.
co.
kr ME4435 P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
FEATURES ● -30V/-9.
1A,RDS(ON)=20mΩ@VGS=-10V ● -30V/-6.
9A,RDS(ON)=35mΩ@VGS=-4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(tJ=150℃) Pulsed Drain Current Avalanche Energy with Single Pulse(L=0.
1mH) Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case *The device mounted on 1in2 FR4 board with 2 oz copper Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM EAS IS PD TJ RθJA RθJC 10 secs Steady State -30 ±20 Unit V V -9.
1 -7.
3 -30 50 -2.
1 2.
5 1.
6 -55 to 150 T≦10 sec Steady State 38 -7 -5.
6 A A mJ -1.
25 1.
5 0.
9 30 62 A W ℃ ℃/W ℃/W TA=25℃ TA=70℃ Mar,2007-Ver4.
0 Datasheet pdf - http://www.
DataSheet4U.
net/ 01 www.
DataSheet.
co.
kr ME4435 P-Channel 30-V (D-S) MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol STATIC VGS(th) IGSS Gate Threshold Voltage Gate Leakage Current VDS=VGS, ID=-250μA VDS=0V, VGS=±20V VDS=-30V, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=-...


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