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PBSS4140DPN

NXP Semiconductors
Part Number PBSS4140DPN
Manufacturer NXP Semiconductors
Description 40 V low VCEsat NPN/PNP transistor
Published Oct 31, 2011
Detailed Description www.DataSheet.co.kr DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4140DPN 40 V low VCEsat NPN/PNP tra...
Datasheet PDF File PBSS4140DPN PDF File

PBSS4140DPN
PBSS4140DPN

Overview
www.
DataSheet.
co.
kr DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4140DPN 40 V low VCEsat NPN/PNP transistor Product specification 2001 Dec 13 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor FEATURES • 600 mW total power dissipation • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replaces two SOT23 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs.
APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices).
6 handbook, halfpage 5 4 PBSS4140DPN QUICK REFERENCE DATA SYMBOL VCEO IC ICM TR1 TR2 RCEsat PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current peak collector current NPN PNP equivalent on-resistance MAX.
40 1 2 − − <500 UNIT V A A − − mΩ 6 5 4 DESCRIPTION TR2 NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package.
1 2 3 MAM445 TR1 1 2 3 MARKING TYPE NUMBER PBSS4140DPN MARKING CODE M2 Fig.
1 Top view Simplified outline SC74 (SOT457) and symbol.
2001 Dec 13 2 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS − − − − − − Tamb ≤ 25 °C; note 1 − −65 − −65 Tamb ≤ 25 °C; note 1 − PBSS4140DPN MIN.
MAX.
UNIT Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1.
Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTER...


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