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2SB566

Hitachi Semiconductor
Part Number 2SB566
Manufacturer Hitachi Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description 2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementa...
Datasheet PDF File 2SB566 PDF File

2SB566
2SB566

Overview
2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline TO-220AB 1 2 3 1.
Base 2.
Collector (Flange) 3.
Emitter Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 2SB566(K) –70 –50 –5 –4 –8 40 150 –55 to +150 2SB566A(K) –70 –60 –5 –4 –8 40 150 –55 to +150 Unit V V V A A W °C °C 2SB566(K), 2SB566A(K) Electrical Characteristics (Ta = 25°C) 2SB566(K) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SB566A(K) Max — — — –1 200 — –1.
0 –1.
2 — — — — Min –70 –60 –5 — 60 35 — — — — — — Typ — — — — — — — — 15 0.
3 3.
0 2.
5 Max — — — –1 200 — –1.
0 –1.
2 — — — — V V MHz µs µs µs Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –50 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –50 V, IE = 0 VCE = –4 V, IC = –1 A VCE = –4 V, IC = –0.
1 A I C = –2 A, IB = –0.
2 A I C = –2 A, IB = –0.
2 A VCE = –4 V, IC = –0.
5 A VCC = –10.
5 V I C = 10IB1 = –10IB2 = –0.
5 A Min –70 –50 –5 — 60 35 — — — — — — Typ — — — — — — — — 15 0.
3 3.
0 2.
5 DC current tarnsfer ratio hFE1* hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage VCE(sat) VBE(sat) Gain bandwidth product f T Turn on time Turn off time Storage time Note: B 60 to 120 t on t off t stg 1.
The 2SB566(K) and 2SB566A(K) are grouped by h FE1 as follows.
C 100 to 200 2 2SB566(K), 2SB566A(K) Maximum Collector Dissipation Curve Area Safe Operation 60 Collector power dissipation PC (W) –10 –5 IC max (Continuous) Collector current IC (A) 40 –2 TC = 25°C D C pe O t ra io n –1.
0 –0.
5 –0.
2 –0.
1 –1 (–50 V, –0.
22 A)...


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