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SSM9962GM

Silicon Standard
Part Number SSM9962GM
Manufacturer Silicon Standard
Description DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Published Nov 14, 2011
Detailed Description www.DataSheet.co.kr SSM9962M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate char...
Datasheet PDF File SSM9962GM PDF File

SSM9962GM
SSM9962GM

Overview
www.
DataSheet.
co.
kr SSM9962M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics D2 D1 D1 D2 BV DSS R DS(ON) G2 S2 40V 25mΩ 7A ID SO-8 S1 G1 Description D1 D2 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SSM9962M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters.
G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9962GM.
Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 40 ± 20 7 5.
5 20 2 0.
016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
62.
5 Unit °C/W 8/21/2004 Rev.
2.
01 www.
SiliconStandard.
com 1 of 5 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr SSM9962M/GM Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.
40 1 - Typ.
0.
1 Max.
Units 25 40 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆BV DSS/∆Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=7A VGS=4.
5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=7A 11 25.
8 4.
4 9.
1 10.
6 6.
8 26.
3 12 1165 205 142 Gate Threshold Voltage Forward Transconductance Drain...


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