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JCS8N60B

JILIN SINO-MICROELECTRONICS
Part Number JCS8N60B
Manufacturer JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Published Dec 4, 2011
Detailed Description www.DataSheet.co.kr R N N-CHANNEL MOSFET JCS8N60B MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg z z...
Datasheet PDF File JCS8N60B PDF File

JCS8N60B
JCS8N60B


Overview
www.
DataSheet.
co.
kr R N N-CHANNEL MOSFET JCS8N60B MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg z z z UPS 7.
0 A 600 V 1.
2 Ω 25 nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge z Low Crss (typical 16pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product z z Crss ( 16pF) z z z dv/dt z RoHS ORDER MESSAGE Order codes JCS8N60CB-O-C-N-B JCS8N60FB-O-F-N-B Halogen Free NO NO Device Weight 2.
15 g(typ) 2.
20 g(typ) Marking JCS8N60CB JCS8N60FB Package TO-220C TO-220MF Packaging Tube Tube ：201007A 1/10 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr R JCS8N60B ABSOLUTE RATINGS (Tc=25℃) JCS8N60CB 600 7.
0 4.
3 30 ±30 590 7.
0 14.
0 4.
5 142 48 JCS8N60FB 600 7.
0* 4.
3* 30* Unit V A A A V mJ A mJ V/ns W Value Parameter － Drain-Source Voltage Drain Current Symbol VDSS ID T=25℃ T=100℃ IDM VGSS -continuous （ 1） Drain Current - pulse （note 1） Gate-Source Voltage （ 2） EAS Single Pulsed Avalanche Energy （note 2） （ 1） Avalanche Current（note 1） （ 1） Repetitive Avalanche Current（note 1） IAR EAR （ 3） dv/dt Peak Diode Recovery dv/dt（note 3） PD TC=25℃ -Derate above 25℃ TJ，TSTG Power Dissipation 1.
14 0.
38 W/℃ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes -55～+150 ℃ TL 300 ℃ * *Drain current limited by maximum junction temperature ：201007A 2/10 Datasheet pdf - http://www.
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net/ www.
DataSheet.
co.
kr R JCS8N60B Tests conditions Min Parameter Symbol Typ Max Units ELECTRICAL CHARACTERISTICS Off –Characteristics － Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characterist...


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