DatasheetsPDF.com

RJM0306JSP

Part Number	RJM0306JSP
Manufacturer	Renesas Technology
Description	Silicon N / P Channel Power MOS FET
Published	Dec 7, 2011
Detailed Description	www.DataSheet.co.kr Preliminary Datasheet RJM0306JSP Silicon N / P Channel Power MOS FET High Speed Power Switching Fe...
Datasheet	RJM0306JSP PDF File

Overview

www.
DataSheet.
co.
kr Preliminary Datasheet RJM0306JSP Silicon N / P Channel Power MOS FET High Speed Power Switching Features      Two elements each of N and P channels are incorporated (suitable for H-bridge circuit) High density mounting Low on-resistance Capable of 4 V gate drive High temperature D-S leakage guarantee Avalanche rating REJ03G1571-0101 Rev.
1.
01 May 28, 2010 Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) S7 Pin No.
1 2 D5 3 4 2G MOS1 Nch S3 4G MOS2 Nch 5 6 7 8 Element MOS1 (Nch) MOS4 (Pch) MOS1 (Nch) MOS1 (Nch) MOS2 (Nch) MOS2 (Nch) MOS2 (Nch) MOS3 (Pch) MOS3 (Pch) MOS3 (Pch) MOS4 (Pch) MOS4 (Pch) Drain Gate Source Gate Electrode Drain Gate Source Gate MOS4 Pch MOS3 Pch 6G 65 87 3 12 4 8G D1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Not...

Similar Datasheet

RJM0306JSP Silicon N / P Channel Power MOS FET - Renesas Technology

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)