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IXFT50N30Q3

IXYS
Part Number IXFT50N30Q3
Manufacturer IXYS
Description Power MOSFET
Published Dec 10, 2011
Detailed Description Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N30Q3 IXFH50...
Datasheet PDF File IXFT50N30Q3 PDF File

IXFT50N30Q3
IXFT50N30Q3

Overview
Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N30Q3 IXFH50N30Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 300 V 300 V  20 V  30 V 50 A 150 A 50 A 1.
5 J 50 V/ns 690 W -55 .
.
.
+150 150 -55 .
.
.
+150  C  C  C 300 °C 260 °C 1.
13 / ...


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