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2N6935

Part Number	2N6935
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Dec 12, 2011
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Swi...
Datasheet	2N6935 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for off-line power supplies，switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 650 V 400 V VEBO Emitter-Base voltage 8 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 23 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperatu...

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