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2N690 Datasheet PDF

Central Semiconductor
Part Number 2N690
Manufacturer Central Semiconductor
Title SILICON CONTROLLED RECTIFIER
Description 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT C...
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2N690 2N690 2N690




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2N60 : These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) (TYP)= 4.0Ω ID = 2A 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤4.5Ω) ● Low Gate Charge(Typ:8nC) ● Low Reverse Transfer Capacitances(Typ:3.8pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor. 4 Electrical Characteristics 4.1 Absolute Maximum Rati.

2N60 : 2A, 600V, N H FQU2N60C FQD2N60C H2N60U H2N60D 2N60 HAOHAI U: TO-251 D: TO-252 80/ 2.5K/ 2N60 Series N-Channel MOSFET 4Kpcs/ 5Kpcs/ 24Kpcs 25Kpcs  ■Features   Originative New Design   Superior Avalanche Rugged Technology   Robust Gate Oxide Technology   Very Low Intrinsic Capacitances   Excellent Switching Characteristics   Unrivalled Gate Charge: 5.5nC(Typ.)   Extended Safe Operating Area   Lower RDS(ON): 4.0Ω(Typ.) @ VGS=10V   100% Avalanche Tested   Package: TO-251 & TO-252(IPAK & DPAK) ID=1.8A BVDSS=600V RDS(on)=4.0Ω  ■   ,,,,,RoHS  ■   、LCD、LED、、UPS、   、、、、、、   、、  ■   TO-251(IPAK)   TO-252(DPAK) 2N60 Series Pin Assignment 3-Lead Plastic TO-251 Package Cod.

2N60 : isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD Tj Tstg Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature 600 V ±30 V 2 A 8 A 44 W 150 ℃ -55~150 ℃ ·THERMA.

2N60 : isc N-Channel MOSFET Transistor 2N60 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Plused 8 A PD Total Dissipation @TC=25℃ 44 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature .

2N60 : The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Power MOSFET  SYMBOL www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-053.AB 2N60 Power MOSFET  ORDERING INFORMATION Ordering.

2N60 : The Nell 2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. FEATURES RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11nC max.) Low reverse transfer capacitance (CRSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-251 (I-PAK) (2N60F) D D G S TO-252 (D-PAK) (2N60G) GDS TO-220AB.

2N60 : The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. TO-220 PIN1 G ! PI.

2N60 : R SEMICONDUCTOR 2N60 600V N-Channel Power MOSFET FEATURES ● RDS(ON)4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with EU RoHS directive. ● Improved dv/dt capability,high ruggedness MECHANICAL DATA PRODUCT SUMMARY V DS (V) RDS(on) (Ω) 600 4.4 @ VGS =10V TO-220AB 2N60 ITO-220AB 2N60F ID (A) 2 TO-263 2N60D ● Case:TO-220,ITO-220,TO-251,TO-252, TO-262,TO-263 Package 23 1 Ordering Information Part No. Package Packing 1 23 TO-262 2N60E 1 23 TO-251 2N60N TO-252 2N60M 2N60-TU TO-220 50pcs / Tube 2N60F-TU ITO-220 50pcs / Tube 2N60E-TU TO-262 50pcs / Tube 2N60D-TU 2N60D-TR 2N60N-TU 2N60M-TU 2N60M-TR TO-263 TO-263 TO-251 TO-252 TO-252 50pcs / T.

2N60 : The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 3.8Ω@VGS = 10V. * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Pb-free plating product number: 2N60L ORDERING INFORMATION Order Number Normal Lea.

2N60 : 2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60 ITO-220AB 2N60F TO-262 2N60H TO-263 2N60B TO-252 2N60G TO-251 2N60D Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seco.

2N60-C : The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) 4.6 Ω @ VGS = 10V, ID =1A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-A46.G 2N60-C  ORDERING INFORMATION Ordering Number Lead .

2N60-CBS : The UTC 2N60-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 8.5Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 9 QW-R209-111.E 2N60-CBS Power MOSFET  ORDERING INFORMATION Orderi.

2N60-E : The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) 5.0Ω @ VGS = 10V, ID =1A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-974.D 2N60-E Power MOSFET  ORDERING INFORMATION Ordering .

2N60-F : The UTC 2N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL 2.Drain 1 TO-251 1 TO-252 1.Gate 3.Source  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 2N60L-TM3-T 2N60G-TM3-T 2N60L-TN3-R 2N60G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Pa.

2N60-TC : The UTC 2N60-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 4.2 Ω @ VGS=10V, ID=1.0A * High Switching Speed 1 SOT-223 1 TO-220F 11 TO-220F1 TO-220F2 1 TO-251 1 TO-252  SYMBOL 2.Drain 1.Gate 3.Source  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 2N60L-AA3-R 2N60G-AA3-R 2N60L-TF1-T 2N60G-TF1-T 2N60L-TF2-T 2N60G-TF.

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