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2SB930

Panasonic Semiconductor
Part Number 2SB930
Manufacturer Panasonic Semiconductor
Description PNP Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm ...
Datasheet PDF File 2SB930 PDF File

2SB930
2SB930

Overview
Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type 10.
0±0.
3 1.
5±0.
1 8.
5±0.
2 6.
0±0.
5 3.
4±0.
3 Unit: mm 1.
0±0.
1 For power amplification Complementary to 2SD1253 and 2SD1253A s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
1.
5max.
1.
1max.
10.
5min.
2.
0 0.
8±0.
1 0.
5max.
2.
54±0.
3 5.
08±0.
5 1 2 3 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –5 –8 –4 40 1.
3 150 –55 to +150 Unit V 2SB930 2SB930A 2SB930 Collector to base voltage Collector to 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.
4±0.
3 1.
0±0.
1 8.
5±0.
2 6.
0±0.
3 emitter voltage 2SB930A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 14.
7±0.
5 4.
4±0.
5 0 to 0.
4 V A A W ˚C ˚C 10.
0±0.
3 1.
5–0.
4 4.
4±0.
5 2.
0 0.
8±0.
1 2.
54±0.
3 R0.
5 R0.
5 1.
1 max.
5.
08±0.
5 1 2 3 s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB930 2SB930A 2SB930 2SB930A 2SB930 2SB930A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = –4A, IB1 = – 0.
4A, IB2 = 0.
4A Conditions VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VCE = –30V, IB = 0 VCE = –60V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –4A, IB = – 0.
4A VCE = –10V, IC = – 0.
1A, f = 1MHz 20 0.
2 0.
5 0.
2 –60 –80 70 15 min typ 1:Base 2:Collector 3:Emitter N Type Package (DS) max –400 –400 –700 –700 –1 3.
0–0.
2 +0.
4 +0 Unit µA µA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE...


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