DatasheetsPDF.com

2SB931

Part Number	2SB931
Manufacturer	Panasonic Semiconductor
Description	PNP Transistor
Published	Mar 22, 2005
Detailed Description	Power Transistors 2SB931 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1254 10.0±0.3 8.5±0....
Datasheet	2SB931 PDF File

Overview

Power Transistors 2SB931 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1254 10.
0±0.
3 8.
5±0.
2 6.
0±0.
5 3.
4±0.
3 Unit: mm 1.
0±0.
1 s Features q q q q 1.
5±0.
1 1.
5max.
1.
1max.
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
(TC=25˚C) Ratings –130 –80 –7 –6 –3 30 1.
3 150 –55 to +150 Unit V 10.
5min.
2.
0 0.
8±0.
1 0.
5max.
2.
54±0.
3 5.
08±0.
5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.
4±0.
3 1.
0±0.
1 8.
5±0.
2 6.
0±0.
3 1.
5–0.
4 A 2.
0 3.
0–0.
2 A W ˚C ˚C 4.
4±0.
5 0.
8±0.
1 2.
54±0.
3 R0.
5 R0.
5 1.
1 max.
0 to 0.
4 5.
08±0.
5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –100V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.
1A VCE = –2V, IC = – 0.
5A IC = –2A, IB = – 0.
1A IC = –2A, IB = – 0.
1A VCE = –10V, IC = – 0.
5A, f = 10MHz IC = – 0.
5A, IB1 = –50mA, IB2 = 50mA 30 0.
3 1.
1 0.
3 –80 45 90 260 – 0.
5 –1.
5 V V MHz µs µs µs min typ max –10 –50 Unit µA µA V FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 4.
4±0.
5 14.
7±0.
5 V 10.
0±0.
3 V +0.
4 +0 1 Power Transistors PC — Ta 40 –6 TC=25˚C (1) TC=Ta (2) With a 50 × 50 × 2mm Al hea...

Similar Datasheet

2SB900 SILICON POWER TRANSISTOR - SavantIC
2SB900 Silicon PNP Power Transistor - Inchange Semiconductor
2SB901 PNP Transistor - INCHANGE
2SB902 PNP Epitaxial Planar Silicon Transistors - Panasonic
2SB903 PNP Transistor - Sanyo Semicon Device
2SB903 SILICON POWER TRANSISTOR - SavantIC
2SB903 Silicon PNP Power Transistor - Inchange Semiconductor
2SB904 PNP Transistor - Sanyo Semicon Device
2SB904 SILICON POWER TRANSISTOR - SavantIC
2SB904 Silicon PNP Power Transistor - Inchange Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)