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2SB940

Panasonic Semiconductor
Part Number 2SB940
Manufacturer Panasonic Semiconductor
Description PNP Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SB940, 2B940A Silicon PNP epitaxial planar type For power amplification For TV vertical deflection o...
Datasheet PDF File 2SB940 PDF File

2SB940
2SB940


Overview
Power Transistors 2SB940, 2B940A Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output Complementary to 2SD1264 and 2SD1264A Unit: mm 0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 φ3.
1±0.
1 1.
4±0.
1 1.
3±0.
2 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 1 2 3 4.
2±0.
2 q q 16.
7±0.
3 14.
0±0.
5 q High collector to emitter voltage VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –200 –200 –150 –180 –6 –3 –2 30 2 150 –55 to +150 Unit V 2SB940 2SB940A 2SB940 Collector to base voltage Collector to emitter voltage 2SB940A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C Solder Dip 4.
0 7.
5±0.
2 s Features 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SB940 2SB940A (TC=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT * Conditions VCB = –200V, IE = 0 VEB = –4V, IC = 0 IC = –50µA, IE = 0 IC = –5mA, IB = 0 IE = –500µA, IC = 0 VCE = –10V, IC = –150mA VCE = –10V, IC = –400mA VCE = –10V, IC = –400mA IC = –500mA, IB = –50mA VCE = –10V, IC = – 0.
5A, f = 10MHz min typ max –50 –50 Unit µA µA V V V –200 –150 –180 –6 60 50 –1 –1 30 240 Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency *h FE1 V V MHz Rank classification Q 60 to 140 P 100 to 240 Rank hFE1 1 Power Transistors PC — Ta 50 –600 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C –500 IB=–4.
5mA –4.
0mA –3.
5mA –3.
0mA –2.
5mA –2.
0mA –1.
5mA –1.
0mA – 0.
5mA 0 0 20 40 60 80 100 120 140 1...


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